au.\*:("BACHMANN, Peter K")
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Diamond and Diamond-like carbon coatings, grans-Montana, Switzerland, September 17-19, 1990MATTEWS, ALAN; BACHMANN, PETER K.Surface & coatings technology. 1991, Vol 47, Num 1-3, issn 0257-8972, 819 p.Conference Proceedings
Depth distributions and range parameters for elements implanted into single-crystal diamonds and chemically vapor-deposited polycrystal diamond filmsWILSON, R. G.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 559-571, issn 0257-8972Conference Paper
Growth and properties of diamond films prepared by microwave plasma chemical vapour deposition using different oxygen-containing source gasesSCHAFER, L; KLAGES, C.-P.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 13-21, issn 0257-8972Conference Paper
plasma-assisted chemical vapor deposition of diamond from an ethanol-water-hydrogen gas mixtureKOSTADINOV, L; DOBREV, D.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 623-627, issn 0257-8972Conference Paper
Deposition of diamond-like carbon films by low energy ion beam and d.c. magnetron sputteringSINGH, A; LAVIGNE, P.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 188-200, issn 0257-8972Conference Paper
Evaluation of abrasion resistance and adhesion strength of brazed diamond film by a shearing testMURAKAWA, M; TAKEUCHI, S.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 572-577, issn 0257-8972Conference Paper
Friction of diamond on diamond and chemical vapour deposition diamond coatingsFENG, Z; FIELD, J. E.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 631-645, issn 0257-8972Conference Paper
Investigation of diamond growth in a new planar microwave plasma sourceOHL, A; SCHMIDT, M.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 29-38, issn 0257-8972Conference Paper
Atomic cluster study of chemisorption and epitaxial diamond films on an Si(100) substrateVERWOERD, W. S; WEIMER, K.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 578-584, issn 0257-8972Conference Paper
Deposition of carbon films by the dissociation of methane in r.f. dischargeWEI ZHANG; CATHERINE, Y.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 69-83, issn 0257-8972Conference Paper
Formation of diamond-like carbon films by 50 Hz sputtering from dual graphite targetsAMORNKITBAMRUNG, V; SUTTISIRI, N.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 533-537, issn 0257-8972Conference Paper
Investigation of hard a-C:H layers generated by a novel r.f. plasma beam sourceOECHSNER, H; TOMCIK, B.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 162-172, issn 0257-8972Conference Paper
Substrate-fre gas-phase synthesis of diamond powder by CO2 laser pyrolysis of C2H4BUERKI, P. R; LEUTWYLER, S.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 22-28, issn 0257-8972Conference Paper
The system for depositing hard diamond-like films onto complex-shaped machine elements in an r.f. arc plasmaMITURA, S; HAS, Z; GOROKHORVSKY, V et al.Surface & coatings technology. 1991, Vol 47, Num 1-3, pp 106-112, issn 0257-8972Conference Paper
Diamond films'94. IIBACHMANN, Peter K; BUCKLEY-GOLDER, Ian M; GLASS, Jeffrey T et al.Diamond and related materials. 1995, Vol 4, Num 5-6, issn 0925-9635, 347 p.Conference Proceedings
Mechanism of bias-enhanced nucleation and heteroepitaxy of diamond on SiROBERTSON, J.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 549-552, issn 0925-9635Conference Paper
Diamond Films '95: European Conference on Diamond, Diamond-like and Related MaterialsBACHMANN, Peter K; BUCKLEY-GOLDER, Ian M; GLASS, Jeffrey T et al.Diamond and related materials. 1996, Vol 5, Num 6-8, issn 0925-9635, 289 p.Conference Proceedings
Deposition mechanism of cubic boron nitrideROBERTSON, J.Diamond and related materials. 1996, Vol 5, Num 3-5, pp 519-524, issn 0925-9635Conference Paper
Fabrication and characterization of carbon nanotube arrays using sandwich catalyst stacksZEXIANG CHEN; BACHMANN, Peter K; DEN ENGELSEN, Daniel et al.Carbon (New York, NY). 2006, Vol 44, Num 2, pp 225-230, issn 0008-6223, 6 p.Article
Electron affinity of carbon systemsROBERTSON, J.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 797-801, issn 0925-9635Conference Paper
An FTIR study of the heteroepitaxy of diamond on siliconJOHN, P; GRAHAM, C; MILNE, D. K et al.Diamond and related materials. 1996, Vol 5, Num 3-5, pp 256-260, issn 0925-9635Conference Paper
Atomic force microscopy observation of the first stages of diamond growth on siliconSANCHEZ, G; SERVAT, J; GOROSTIZA, P et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 592-597, issn 0925-9635Conference Paper
Calculation of migration barriers on hydrogenated diamond surfacesGALI, A; MESZAROS, A; DEAK, P et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 613-616, issn 0925-9635Conference Paper
Diamond growth during bias pre-treatment in the microwave CVD of diamondSTÖCKEL, R; JANISCHOWSKY, K; ROHMFELD, S et al.Diamond and related materials. 1996, Vol 5, Num 3-5, pp 321-325, issn 0925-9635Conference Paper
Electrical properties of a Schottky barrier formed on a homoepitaxially grown diamond (001) filmKIYOTA, H; OKUSHI, H; ANDO, T et al.Diamond and related materials. 1996, Vol 5, Num 6-8, pp 718-722, issn 0925-9635Conference Paper